Description N Channel MOSFET 2N7000
The 2N7000 is an N-Channel Enhancement Mode Field Effect Transistor. It is manufactured using high cell density DMOS technology. This very high density process is designed to minimize on-state resistance . At the same time, it provides robust, reliable, and fast switching performance. It can be used in most applications requiring up to 400mA DC and can deliver pulsed currents up to 2A . It is also suitable for low voltage and low current applications such as:
Small servo motor driver, power MOSFET gate drivers and other switching applications.
N Channel MOSFET 2N7000
SKU: TRAN3005
€ 0,39Incl. € 0,06 VAT
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Description N Channel MOSFET 2N7000
The 2N7000 is an N-Channel Enhancement Mode Field Effect Transistor. It is manufactured using high cell density DMOS technology. This very high density process is designed to minimize on-state resistance . At the same time, it provides robust, reliable, and fast switching performance. It can be used in most applications requiring up to 400mA DC and can deliver pulsed currents up to 2A . It is also suitable for low voltage and low current applications such as:
Small servo motor driver, power MOSFET gate drivers and other switching applications.
